? semiconductor components industries, llc, 2011 october, 2011 ? rev. 10 1 publication order number: mmbt4401lt1/d mmbt4401l, smmbt4401l switching transistor npn silicon features ? these devices are pb ? free, halogen free/bfr free and are rohs compliant ? aec ? q101 qualified and ppap capable ? s prefix for automotive and other applications requiring unique site and control change requirements maximum ratings rating symbol value unit collector ? emitter voltage v ceo 40 vdc collector ? base voltage v cbo 60 vdc emitter ? base voltage v ebo 6.0 vdc collector current ? continuous i c 600 madc collector current ? peak i cm 900 madc thermal characteristics characteristic symbol max unit total device dissipation fr ? 5 board (note 1) @t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction ? to ? ambient r ja 556 c/w total device dissipation alumina substrate (note 2) @t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction ? to ? ambient r ja 417 c/w junction and storage temperature t j , t stg ? 55 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. *transient pulses must not cause the junction temperature to be exceeded. 1. fr ? 5 = 1.0 0.75 0.062 in. 2. alumina = 0.4 0.3 0.024 in. 99.5% alumina. sot ? 23 (to ? 236) case 318 style 6 http://onsemi.com 1 2 3 collector 3 1 base 2 emitter http://onsemi.com *date code orientation and/or overbar may vary depending upon manufacturing location. 1 2x m 2x = specific device code m = date code* = pb ? free package (note: microdot may be in either location) marking diagram device package shipping ? ordering information mmbt4401lt3g sot ? 23 (pb ? free) ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. mmbt4401lt1g SMMBT4401LT1G sot ? 23 (pb ? free) 3000 / tape & reel 10,000 / tape & reel
mmbt4401l, smmbt4401l http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ? emitter breakdown voltage (note 3) (i c = 1.0 madc, i b = 0) v (br)ceo 40 ? vdc collector ? base breakdown voltage (i c = 0.1 madc, i e = 0) v (br)cbo 60 ? vdc emitter ? base breakdown voltage (i e = 0.1 madc, i c = 0) v (br)ebo 6.0 ? vdc base cutoff current (v ce = 35 vdc, v eb = 0.4 vdc) i bev ? 0.1 adc collector cutoff current (v ce = 35 vdc, v eb = 0.4 vdc) i cex ? 0.1 adc on characteristics (note 3) dc current gain (i c = 0.1 madc, v ce = 1.0 vdc) (i c = 1.0 madc, v ce = 1.0 vdc) (i c = 10 madc, v ce = 1.0 vdc) (i c = 150 madc, v ce = 1.0 vdc) (i c = 500 madc, v ce = 2.0 vdc) h fe 20 40 80 100 40 ? ? ? 300 ? ? collector ? emitter saturation voltage (i c = 150 madc, i b = 15 madc) (i c = 500 madc, i b = 50 madc) v ce(sat) ? ? 0.4 0.75 vdc base ? emitter saturation voltage (i c = 150 madc, i b = 15 madc) (i c = 500 madc, i b = 50 madc) v be(sat) 0.75 ? 0.95 1.2 vdc small ? signal characteristics current ? gain ? bandwidth product (i c = 20 madc, v ce = 10 vdc, f = 100 mhz) f t 250 ? mhz collector ? base capacitance (v cb = 5.0 vdc, i e = 0, f = 1.0 mhz) c cb ? 6.5 pf emitter ? base capacitance (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) c eb ? 30 pf input impedance (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) h ie 1.0 15 k voltage feedback ratio (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) h re 0.1 8.0 x 10 ? 4 small ? signal current gain (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) h fe 40 500 ? output admittance (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) h oe 1.0 30 mhos switching characteristics delay time (v cc = 30 vdc, v eb = 2.0 vdc, i c = 150 madc, i b1 = 15 madc) t d ? 15 ns rise time t r ? 20 storage time (v cc = 30 vdc, i c = 150 madc, i b1 = i b2 = 15 madc) t s ? 225 ns fall time t f ? 30 3. pulse test: pulse width 300 s, duty cycle 2.0%. figure 1. turn ? on time figure 2. turn ? off time switching time equivalent test circuits scope rise time < 4.0 ns *total shunt capacitance of test jig connectors, and oscilloscope +16 v -2.0 v < 2.0 ns 0 1.0 to 100 s, duty cycle 2.0% 1.0 k +30 v 200 c s * < 10 pf +16 v -14 v 0 < 20 ns 1.0 to 100 s, duty cycle 2.0% 1.0 k +30 v 200 c s * < 10 pf -4.0 v
mmbt4401l, smmbt4401l http://onsemi.com 3 figure 3. charge data i c , collector current (ma) q, charge (nc) 2.0 3.0 5.0 7.0 10 1.0 10 20 50 70 100 200 0.1 300 500 0.7 0.5 v cc = 30 v i c /i b = 10 figure 4. turn ? on time i c , collector current (ma) 20 30 50 5.0 10 7.0 figure 5. rise and fall times i c , collector current (ma) figure 6. storage time i c , collector current (ma) figure 7. fall time i c , collector current (ma) 20 30 50 70 100 10 5.0 7.0 q t q a 25 c 100 c transient characteristics 0.3 0.2 30 t s , storage time (ns) t, time (ns) t, time (ns) t f , fall time (ns) 70 100 10 20 50 70 100 200 300 500 30 i c /i b = 10 t r @ v cc = 30 v t r @ v cc = 10 v t d @ v eb = 2.0 v t d @ v eb = 0 20 30 50 5.0 10 7.0 70 100 10 20 50 70 100 200 300 500 30 v cc = 30 v i c /i b = 10 t r t f 10 20 50 70 100 200 300 500 30 100 200 30 70 50 300 10 20 50 70 100 200 300 500 30 t s = t s - 1/8 t f i b1 = i b2 i c /i b = 10 to 20 v cc = 30 v i b1 = i b2 i c /i b = 20 i c /i b = 10
mmbt4401l, smmbt4401l http://onsemi.com 4 6.0 8.0 10 0 4.0 2.0 0.1 2.0 5.0 10 20 50 1.0 0.5 0.2 0.01 0.02 0.05 100 figure 8. frequency effects f, frequency (khz) small ? signal characteristics noise figure v ce = 10 vdc, t a = 25 c; bandwidth = 1.0 hz nf, noise figure (db) i c = 1.0 ma, r s = 150 i c = 500 a, r s = 200 i c = 100 a, r s = 2.0 k i c = 50 a, r s = 4.0 k r s = optimum rs = source rs = resistance 100k 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 6.0 8.0 10 0 4.0 2.0 nf, noise figure (db) figure 9. source resistance effects r s , source resistance (ohms) f = 1.0 khz i c = 50 a i c = 100 a i c = 500 a i c = 1.0 ma h parameters v ce = 10 vdc, f = 1.0 khz, t a = 25 c this group of graphs illustrates the relationship between h fe and other ?h? parameters for this series of transistors. to obtain these curves, a high ? gain and a low ? gain unit were selected from the mmbt4401lt1 lines, and the same units were used to develop the correspondingly numbered curves on each graph. h ie , input impedance (ohms) figure 10. input impedance i c , collector current (ma) 50k 500 20k 10k 5.0k 2.0k 1.0k 0.1 0.2 0.5 0.7 1.0 2.0 3.0 10 0.3 5.0 7.0 figure 11. voltage feedback ratio i c , collector current (ma) 0.1 0.2 0.5 0.7 1.0 2.0 3.0 10 0.3 0.2 10 figure 12. output admittance i c , collector current (ma) 100 1.0 5.0 7.0 50 20 10 5.0 2.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 h , output admittance ( mhos) oe h , voltage feedback ratio (x 10 ) re -4 0.1 0.2 0.5 0.7 1.0 2.0 3.0 10 0.3 5.0 7.0 mmbt4401lt1 unit 1 mmbt4401lt1 unit 2 mmbt4401lt1 unit 1 mmbt4401lt1 unit 2 mmbt4401lt1 unit 1 mmbt4401lt1 unit 2
mmbt4401l, smmbt4401l http://onsemi.com 5 static characteristics -55 c figure 13. dc current gain i c , collector current (a) figure 14. collector saturation region i b , base current (ma) 0.4 0.6 0.8 1.2 0.2 v , collector-emitter voltage (volts) 0 ce i c = 1.0 ma 0.001 10 ma 100 ma 500 ma 50 250 300 500 0.01 h , dc current gain 0.1 0 1 fe t j = 150 c 400 25 c v ce = 5.0 v v ce = 2.0 v v ce = 1.0 v figure 15. collector ? emitter saturation voltage vs. collector current i c , collector current (a) 0.15 0.20 0.30 0.35 0.05 figure 16. temperature coefficients i c , collector current (ma) vce(sat), collector-emitter saturation voltage (v) 0.01 0.1 0 -0.5 0 +0.5 -1.0 -1.5 -2.0 1 150 c vc for v ce(sat) vb for v be 0.0001 coefficient (mv/ c) -2.5 1.0 2.0 5.0 10 20 50 100 500 200 0.1 0.2 0.5 0.01 0.1 1.0 110 300 ma 100 150 200 350 450 -55 c 0.001 25 c 0.10 0.25 i c /i b = 10 100
mmbt4401l, smmbt4401l http://onsemi.com 6 static characteristics figure 17. base ? emitter saturation voltage vs. collector current figure 18. base ? emitter turn on voltage vs. collector current i c , collector current (a) i c , collector current (a) 1 0.1 0.01 0.001 0.0001 0.3 0.4 0.5 0.6 0.7 0.9 1.0 1.1 1 0.1 0.01 0.001 0.0001 0.3 0.4 0.5 0.6 0.7 0.9 1.0 v be(sat) , base ? emitter satura- tion voltage (v) v be(on) , base ? emitter turn on voltage (v) 0.8 150 c 25 c ? 55 c 0.8 150 c 25 c ? 55 c i c /i b = 10 v ce = 2.0 v figure 19. input capacitance vs. emitter base voltage figure 20. output capacitance vs. collector base voltage v eb , emitter base voltage (v) v cb , collector base voltage (v) 6 3 2 1 0 9 11 13 15 19 21 50 30 25 10 0 1.5 2.5 3.5 4.5 6.5 8.5 c ibo , input capacitance (pf) c obo , output capacitance (pf) 17 5.5 4 5 5 1520 354045 7.5 figure 21. safe operating area figure 22. current ? gain ? bandwidth product v ce , collector emitter voltage (v) i c , collector current (ma) 100 10 1 0.001 0.01 1 10 0.1 10 1000 i c , collector current (a) f t , current ? gain ? bandwidth (mhz) 0.1 100 1 100 1000 10 msec 1 sec v ce = 1.0 v t a = 25 c
mmbt4401l, smmbt4401l http://onsemi.com 7 package dimensions sot ? 23 (to ? 236) case 318 ? 08 issue ap mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 soldering footprint* *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. style 6: pin 1. base 2. emitter 3. collector d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c 0 ??? 10 0 ??? 10 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. mmbt4401lt1/d publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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